Switching and memory in ZnSe single bond sign Ge heterojunctions

Abstract

Heterojunctions of nZnSeSingle Bond signpGe switched from a high impedance to low in 100 nsec when a threshold voltage is exceeded. Resetting occurs in the opposite bias direction in 10 nsec after sufficient current is applied. Either state is maintained with all bias removed for a minimum of two weeks. © 1970 The American Institute of Physics.