D.G.J. Sutherland, H. Akatsu, et al.
Journal of Electron Spectroscopy and Related Phenomena
We have investigated the role of surfactant coverage and bonding for growth of Ge on Si(111). At 470°C Ge grows on Si(111)-(7×7) in a Stranski-Krastanov fashion. Preadsorption of 1-ML Ga at 500°C forms a Ga(111)-(6.3×6.3) structure and alters the Ge growth mode from three-dimensional (3D) islanding to continuous film formation. However, the epitaxial layer contains defects, caused by the presence of domain boundaries of both A- and B-type material. Growth properties depend strongly on the initial Ga coverage: if a (3×3) surface with 1/3-mL Ga is used, a modified Stranski-Krastanov growth mode is observed, with 3D islands of a uniform predominant thickness.
D.G.J. Sutherland, H. Akatsu, et al.
Journal of Electron Spectroscopy and Related Phenomena
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
J. Falta, M. Copel, et al.
Physical Review B
J. Falta, R.M. Tromp, et al.
Physical Review B