Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
GaAs epilayers which are grown by molecular-beam epitaxy under "normal" group III-V fluxes but at very low substrate temperatures contain as much as 1% excess arsenic. Upon annealing these epilayers at a temperature of 600°C, the excess arsenic forms precipitates. We have undertaken a systematic study of the substrate growth temperature dependence of this incorporation of excess arsenic in both GaAs and AlGaAs epilayers. The substrate growth temperature was varied in increments of 25°C from 225 to 375°C after every 0.25 μm of film growth for a GaAs and an AlGaAs epilayer. Both epilayers were grown using a dimer arsenic source and a group V to total group III beam equivalent pressure ∼20. After growth the films were annealed for 1 h in the As flux at a temperature of 600°C. Cross-sectional samples were than prepared by the ion thinning technique and examined by transmission electron microscopy (TEM). Both epilayers contained arsenic precipitates; this is the first observation of arsenic precipitates in an AlGaAs epilayer. The density of the arsenic precipitates in the two epilayers had a strong dependence on substrate growth temperature. Details of the film growth and of the TEM observations are reported.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.W. Gammon, E. Courtens, et al.
Physical Review B
Revanth Kodoru, Atanu Saha, et al.
arXiv