Conference paper
RADIAL DISTRIBUTION OF OXYGEN MOLECULAR IONS IN DIODE REACTOR.
Y.H. Lee, P.R. Brosious
Symposium on Plasma Processing 1986
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x-ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F-polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near-surface region up to a depth in excess of 400 Å from the Si surface.
Y.H. Lee, P.R. Brosious
Symposium on Plasma Processing 1986
Y.H. Lee, P.R. Brosious, et al.
physica status solidi (a)
G.S. Oehrlein, R. Ghez, et al.
ICDS 1984
G.S. Oehrlein, G.J. Coyle, et al.
Surface and Interface Analysis