About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Study of charge trapping as a degradation mechanism in electrically alterable read-only memories
Abstract
Charge trapping in the intervening oxide layers of electrically-alterable read-only memories has been studied for different device configurations incorporating a dual electron injector structure (DEIS). The degradation of the write/erase capability of these devices is associated with electron capture in neutral trapping centers present in both chemical-vapor-deposited and thermal oxides. Annealing the exposed DEIS stack at 1000 °C in N2 results in better cycling capability. The dominant traps in unannealed samples were found to have capture cross sections of σc0x ≊10-16-10-17 cm2, while those in annealed samples have σc0x ≊10-17-10 -18 cm2.