E. Burstein
Ferroelectrics
The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals