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Publication
IEDM 1983
Conference paper
STUDY OF AVALANCHE BREAKDOWN IN SCALED N-MOSFETS.
Abstract
The behavior of channel breakdown in n-MOSFETs miniaturized by isothermal, constant field scaling is examined. Both a first-order analytical estimate and rigorous two-dimensional numerical simulation are used to understand the scaling of channel breakdown. A sublinear dependence of sustaining and snapback voltages on channel length is found and explained.