About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy
Abstract
We present growth and characterization of Cr- and Mn-doped InN films grown by plasma-assisted molecular beam epitaxy. The films were deposited on c -plane sapphire substrates, employing GaN intermediate layers to accommodate the lattice mismatch between InN and sapphire. Preliminary studies were also made on growth of Cr-doped InN over (111) GaAs substrates. X-ray diffraction and Hall measurements were used for structural and electrical characterization of the films. The magnetic properties of these materials were measured using superconducting quantum interference device magnetometry. While InN:Mn showed signs of phase segregation and paramagnetism, InN:Cr displayed ferromagnetic properties. © 2006 American Vacuum Society.