Stress induced charge trapping effects in SiO₂/Al ₂O₃ gate stacks with TiN electrodes

Stress induced charge trapping effects in SiO2/Al 2O3 gate stacks were investigated. Current-voltage (I-V) and capacitance-voltage (C-V) sensing techniques were used. The results show a strong asymmetric charge trapping effects which is due to asymmetry of the SiO2/Al2O3 and difference in work function between the TiN electrode and the Si substrate.