Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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6 results for U. Schwalke
Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID-VG
- A. Kerber
- E. Cartier
- et al.
- 2003
- INFOS 2003
Characterization of the VT-instability in SiO2 / HfO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Characterization of the VT-instability in SIO2/HFO2 gate dielectrics
- A. Kerber
- E. Cartier
- et al.
- 2003
- IRPS 2003
Stress induced charge trapping effects in SiO2/Al 2O3 gate stacks with TiN electrodes
- A. Kerber
- E. Cartier
- et al.
- 2003
- Journal of Applied Physics
Charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes
- Andreas Kerber
- Eduard Cartier
- et al.
- 2003
- IEEE Transactions on Electron Devices