B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
We report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x0.4) AlxGa1-xAs layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain splits the three X valleys such that the Xz valley lies above the Xx and Xy valleys. An independent-valley model perfectly accounts for the properties of the donor resonance over the full indirect-band-gap range of the alloy without inclusion of the spin-valley interaction. This effect is attributed to small local, random in-plane strains which quench the first-order spin-valley splitting. © 1990 The American Physical Society.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
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SPIE AeroSense 1997