About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physical Review B
Paper
Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures
Abstract
We report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain splits the three X valleys such that the Xz valley lies above the Xx and Xy valleys. An independent-valley model perfectly accounts for the properties of the donor resonance over the full indirect-band-gap range of the alloy without inclusion of the spin-valley interaction. This effect is attributed to small local, random in-plane strains which quench the first-order spin-valley splitting. © 1990 The American Physical Society.