Maha Mohammed Khayyat, Brent A. Wacaser, et al.
Communications and Photonics Conference 2011
The formation of abrupt Si/Ge heterointerfaces in nanowires presents useful possibilities for bandgap engineering. We grow Si nanowires containing thick Ge layers and sub-1 nm thick Ge "quantum wells" and measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial compressive strains of several percent, while stress at the Si/Ge interface causes lattice rotation. High strains can be achieved in these heterostructures, but we show that they are unstable to interdiffusion.
Maha Mohammed Khayyat, Brent A. Wacaser, et al.
Communications and Photonics Conference 2011
Brian A. Bryce, B. Robert Ilic, et al.
Applied Physics Letters
Federico Panciera, Jerry Tersoff, et al.
Advanced Materials
Cheng-Yen Wen, Jerry Tersoff, et al.
Physical Review Letters