Conference paper
CONTACT PROPERTIES OF METAL/POLYACETYLENE INTERFACES.
Jerzy Kanicki
ECS Meeting 1984
Room-temperature stable paramagnetic defects have been induced in hydrogenated amorphous silicon nitride films by exposure to sub-band-gap ultraviolet light. These defects are almost certainly trivalent silicon centers which can be completely annealed at temperatures higher than 250°C. These defects seem similar in chemical origin to light-induced centers in hydrogenated amorphous silicon and defects in irradiated metal-oxide-semiconductor field-effect transistors.
Jerzy Kanicki
ECS Meeting 1984
J.F. Nijs, Jerzy Kanicki, et al.
E. C. Photovoltaic Solar Energy Conference 1983
W.L. Warren, Jerzy Kanicki, et al.
Journal of Applied Physics
D. Chen, J.M. Viner, et al.
Physical Review B