Stabilisation of gunn oscillations in layered semiconductor structures

Abstract

2-stream interaction between an active GaAs diode and a passive biased semiconductor is shown to reduce the growth rate of a space-charge wave by a factor proportional to the difference of carrier drift velocities in the two interacting semiconductors. This mechanism offers a possible way for stabilising Gunn oscillators with large n0L products. © 1970, The Institution of Electrical Engineers. All rights reserved.