Publication
Electronics Letters
Paper

Stabilisation of gunn oscillations in layered semiconductor structures

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Abstract

2-stream interaction between an active GaAs diode and a passive biased semiconductor is shown to reduce the growth rate of a space-charge wave by a factor proportional to the difference of carrier drift velocities in the two interacting semiconductors. This mechanism offers a possible way for stabilising Gunn oscillators with large n0L products. © 1970, The Institution of Electrical Engineers. All rights reserved.

Date

01 Oct 1970

Publication

Electronics Letters

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