P. Gueret, U. Kaufmann, et al.
Electronics Letters
The influence of a transverse magnetic field on tunnelling through GaAs/AlGaxAs/GaAs heterostructures is investigated theoretically and experimentally. The effect is quite significant for the very thick and low barriers studied. It provides a simple way to determine the barrier transversal time introduced by Stevens, as well as Büttiker and Landauer, from a purely static measurement. © 1987 IOP Publishing Ltd.
P. Gueret, U. Kaufmann, et al.
Electronics Letters
M.A. Lantz, H.J. Hug, et al.
Physical Review Letters
S. Ciraci, A. Baratoff, et al.
Physical Review B
M.A. Lantz, H.J. Hug, et al.
Physical Review B - CMMP