Publication
Semiconductor Science and Technology
Paper

Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well heterostructures

View publication

Abstract

The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.

Date

01 Jan 1999

Publication

Semiconductor Science and Technology

Authors

Topics

Share