E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The conductance of laterally confined double-barrier quantum well resonant tunnelling heterostructures is investigated. The lateral confinement is provided by a Schottky gate and can be varied in a continuous way. Data for dots with nominal diameters in the submicrometre range are reported.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993