Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Tungsten gate metal-oxide-semiconductor capacitors formed by 6.5 nm ofthermal SiO2 and 150 nm of sputtered tungsten have been characterized. The gate metal was deposited using high argon pressure (55 mTorr) to obtain a deposit with a low residual internal stress. To avoid tungsten oxidation and to remove the oxide damage caused by the sputtering deposition process, thermal treatments (500°C ≤ T ≤ 800°C) were performed in a silicide oxygen-free furnace. The electrical characterization has shown the efficacy of the low temperature anneal and the onset of gate oxide degradation on treatments at T ≥ 700°C. There is experimental evidence that this degradation can be attributed, at least partially, to the oxygen depletion that characterizes the environment inside the silicide anneal furnace. © 1990 Elsevier Sequoia S.A.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Sung Ho Kim, Oun-Ho Park, et al.
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