Spontaneous photon emission from 32 nm and 14 nm SOI FETs

Abstract

The very faint spontaneous near-infrared photon emission of scaled SOI FETs fabricated in 32 nm planar and 14 nm FinFET technologies is characterized and modeled for the first time. A high sensitivity and low noise detector is leveraged to measure emission at low voltages, including sub-threshold and linear regions that are extremely faint. Furthermore, the effect of device threshold is studied and modeled for the first time by comparing the emission from FETs with different Vt.