Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects

Abstract

Spiral, multilevel spiral, and lateral solenoidal inductor structures are fabricated on silicon substrates using a Cu-damascene VLSI interconnect technology with a 4 μm-thick Cu top layer. Some chips are mounted on quartz substrates to suppress substrate losses. An 80-nH, 16-turn spiral inductor on quartz has a Q of 20, the highest recorded value to date for an integrated inductor of this size.