SOLID SOLUTIONS OF WSi//2 WITH TiSi//2 OR TaSi//2: STRUCTURE AND RESISTIVITY.

Abstract

This investigation was initiated with the aim of establishing the range of stability of the hexagonal and tetragonal phases of WSi//2 as a function of the alloying additions, and of correlating possible resistivity changes with the existence of these two phases. Comparison of the respective effects of Ti and Ta impurities in WSi//2 may show some interrelation between scattering mechanisms and the electron shells of included atoms. The alloyed silicide films were prepared by solid state reaction of silicon substrate with alloyed metal films.