About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Abstract
Short time annealing (STA) of coevaporated WSi2 on single-crystal and polycrystalline Si (poly-Si) doped with B, P, and As has been carried out with a graphite resistance heater up to 1200°C for times as short as 3s. STA at 1200°C for 6s resulted in good film homogenization and fine line patterns down to submicron dimensions, which remained intact and well adherent. STA at 1200°C for 6s yielded a silicide resistivity 2 to 3 times lower than furnace annealing at 950°C, 30 min. These two anneals would produce a calculated minimal and equivalent B diffusion in an underlying partially fabricated device. Dopants in the poly-Si of the polycide structure move rapidly through both the poly-Si and the WSi2 for both STA and furnace annealing. The B redistributes throughout the polycide, but the As and P are lost from the WSi2 surface by evaporation. © 1984, The Electrochemical Society, Inc. All rights reserved.