HIGH TEMPERATURE PROCESS LIMITATIONS ON TiSi//2.

Abstract

TiSi//2 is perhaps the most attractive candidate for salicide technology due to its low resistivity and the consistency in thermal formation. In salicide application using TiSi//2, there are concerns such as bridging across gates, diffusions and the interaction of Ti with SiO//2 during salicide formation. In addition, for process integration, it is important to know what the high temperature process limitations on TiSi//2 are.