Novel carbon nanotube FET design with tunable polarity

Abstract

Based on a novel device concept, we have fabricated high-performance carbon nanotube transistors exhibiting pure n-and p-type behavior, tunable by electrostatic and/or chemical doping, with excellent off-state performance and the smallest inverse subthreshold slope (63 mV/dec) reported to date. This is achieved by combined electro-static and chemical doping profiles along the nanotube channel. The device design allows for aggressive oxide thickness scaling while maintaining the desired device characteristics. ©2004 IEEE.