C.Michael Melas, P.C. Arnett
ICC 1990
Previous charge-centroid studies of MNOS devices have shown that electrons injected into the insulator structure from the silicon are trapped not solely at the dielectric interface, but can be distributed over nearly the entire nitride thickness. In this paper, results of charge-centroid measurements on thin-oxide MNOS devices are interpreted with a charge trapping model, leading to values for the nitride trap density, capture cross section, and average trapping distance of 6×1018/cm3, 5×10-13 cm2, and 35 Å, respectively.
C.Michael Melas, P.C. Arnett
ICC 1990
P.C. Arnett, D.J. Dimaria
Journal of Applied Physics
T.P. Ma, B.H. Yun, et al.
Journal of Applied Physics
P.C. Arnett, N. Klein
Journal of Applied Physics