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Publication
Applied Physics Letters
Paper
Silicon nanowire piezoresistance: Impact of surface crystallographic orientation
Abstract
We investigate piezoresistance in lithographically defined silicon nanowires of various cross-sectional aspect ratios. Both 〈 110 〉 - and 〈 100 〉 -oriented nanowires are investigated under 〈 110 〉 -oriented strain. The nanowire thickness is varied from 23 to 45 nm and the nanowire width is varied from 5 to 113 nm. Our data shows piezoresistance in silicon nanowires being a surface induced effect with {110} surfaces inducing a much larger piezoresistance than {100} surfaces. This is consistent with a higher density of surface states on {110} surfaces than on {100} surfaces. Our experimental findings support recent computational work pointing toward surface states being the source of giant piezoresistance in silicon nanowires. © 2010 American Institute of Physics.