Jae Woong Nah, Yves Martin, et al.
ECTC 2015
We investigate piezoresistance in lithographically defined silicon nanowires of various cross-sectional aspect ratios. Both 〈 110 〉 - and 〈 100 〉 -oriented nanowires are investigated under 〈 110 〉 -oriented strain. The nanowire thickness is varied from 23 to 45 nm and the nanowire width is varied from 5 to 113 nm. Our data shows piezoresistance in silicon nanowires being a surface induced effect with {110} surfaces inducing a much larger piezoresistance than {100} surfaces. This is consistent with a higher density of surface states on {110} surfaces than on {100} surfaces. Our experimental findings support recent computational work pointing toward surface states being the source of giant piezoresistance in silicon nanowires. © 2010 American Institute of Physics.
Jae Woong Nah, Yves Martin, et al.
ECTC 2015
Martin M. Frank, Steven J. Koester, et al.
Applied Physics Letters
N. Feilchenfeld, Karen Nummy, et al.
SPIE Advanced Lithography 2017
Chi Xiong, Yves Martin, et al.
SPIE OPTO 2019