Silicon nanowire atomic force microscopy probes for high aspect ratio geometries

Abstract

Using site controlled growth of single vapor-liquid-solid silicon nanowires high aspect ratio atomic force microscope probes are fabricated on a wafer scale. Nanowire probe aspect ratios as high as 90:1 are demonstrated. Probe performance and limitations are explored by imaging high aspect ratio etched silicon structures using atomic force microscopy. Silicon nanowire probes are an ideal platform for non-destructive topographic imaging of high aspect ratio features. © 2012 American Institute of Physics.