In situ growth of Si nanowires using transmission electron microscopy

Abstract

We discuss the use of the alloy catalyst AgAu to grow silicon nanowires and Si/Ge heterojunctions. Nanoscale particles of the catalyst with compositions Ag:Au varying from 2:1 to 1:2 can be fabricated and used to form Si nanowires with high crystal quality, and SiGe interfaces that are close to atomically abrupt. In situ experiments in the TEM are essential for investigating the mechanisms of growth with these alloy catalysts. We describe the relationship between growth kinetics and catalyst state, as well as the environmental stability of the alloy catalysts. © The Electrochemical Society.