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Publication
Applied Physics Letters
Paper
Silicon dopant imaging by dissipation force microscopy
Abstract
Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 1014-1018cm-3. Dopant imaging with 150 nm spatial resolution was demonstrated. © 1999 American Institute of Physics.