Silicon dopant imaging by dissipation force microscopy

Abstract

Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 1014-1018cm-3. Dopant imaging with 150 nm spatial resolution was demonstrated. © 1999 American Institute of Physics.