Silicide contacts for shallow junction devices

Abstract

The miniaturization of integrated circuit devices necessitates modification of the present design and fabrication of their electrical contacts. In this review the miniaturization process is discussed and the requirements for contacts to sshallow junction devices are listed. The review is concluded with the presentation of three possible contact schemes, namely the metal-polycrystalline silicon contact, the shallow silicide contact and the silicide contact with dopant redistribution. © 1983.