Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We demonstrate that the cryogenic (e.g., 77K=LNT) properties of SiGe-base heterojunction bipolar transistors and circuits are sufficiently advanced to warrant a serious consideration of the merits of cryogenic BiCMOS technologies for future LNT computer applications. In this paper we review the features of epitaxial SiGe-base bipolar technologies which make them particularly suitable for LNT operation, examine the DC and dynamic properties of SiGe-base transistors operating at low temperatures, highlight the profile design constraints unique to the LNT environment, and discuss future research directions and opportunities. © 1992.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
E. Burstein
Ferroelectrics