PaperModel for the formation of amorphous Si by ion bombardmentF.F. Morehead, B.L. CrowderRadiation Effects
PaperSolid transport rate in the vapor-solvent growth system ZnS:IF. Jona, G. MandelJournal of Physics and Chemistry of Solids
PaperSelf-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in siliconF.F. Morehead, N.A. Stolwijk, et al.Applied Physics Letters
