PaperEnhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomenaF.F. Morehead, R.F. LeverApplied Physics Letters
PaperOn the nature of point defects and the effect of oxidation on substitutional dopant diffusion in siliconT.Y. Tan, U. Gösele, et al.Applied Physics A Solids and Surfaces
PaperEfficient, visible electroluminescence from P-N junctions in Zn xCd1-xTeF.F. Morehead, G. MandelApplied Physics Letters