Publication
Applied Physics Letters
Paper

Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon

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Abstract

We present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000°C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies.

Date

01 Dec 1983

Publication

Applied Physics Letters

Authors

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