W.A. Orr Arienzo, R. Glang, et al.
Journal of Applied Physics
We present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000°C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies.
W.A. Orr Arienzo, R. Glang, et al.
Journal of Applied Physics
F.F. Morehead
Journal of Materials Research
G. Mandel, F.F. Morehead
Applied Physics Letters
R.S. Title, G. Mandel, et al.
Physical Review