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Publication
IRMMW-THz 2018
Conference paper
Sensitivity of SOI Lateral Diodes for Bolometric Sensing
Abstract
In this study we characterize the thermal sensitivity of lateral diodes fabricated in a commercial 180 nm SOl-CMOS process. The current responsivity to temperature and the low-frequency noise were measured and correlated to the device dimensions. We also report on a FPA microbolometer sensor for THz imaging (0.6-1.2 THz) implemented with lateral diode detectors coupled to on-chip antennas.