Christophe Rossel, P. Weigele, et al.
Solid-State Electronics
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
Christophe Rossel, P. Weigele, et al.
Solid-State Electronics
Noelia Vico Triviño, Svenja Mauthe, et al.
ECOC 2020
Matthias Geissler, Heinz Schmid, et al.
Langmuir
Tobias Kraus, Laurent Malaquin, et al.
MicroTAS 2005