SELF-CONSISTENT CALCULATION OF ELECTRON STATES IN NARROW CHANNELS.

Abstract

Two-dimensional self-consistent numerical solutions to the Poisson and Schroedinger equations have been obtained for electron states in narrow gate-induced channels. The formulation of and numerical methods employed in this calculation are described. Electron states calculated for the metal-oxide-silicon grating-gate field-effect transistor are described and compared to electron energy level spacings inferred from the recent channel conductance data of Warren, et al. (1986)