E. Burstein
Ferroelectrics
Two-dimensional self-consistent numerical solutions to the Poisson and Schroedinger equations have been obtained for electron states in narrow gate-induced channels. The formulation of and numerical methods employed in this calculation are described. Electron states calculated for the metal-oxide-silicon grating-gate field-effect transistor are described and compared to electron energy level spacings inferred from the recent channel conductance data of Warren, et al. (1986)
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals