About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEDM 1985
Conference paper
SELF-CONSISTENT CALCULATION OF ELECTRON STATES IN NARROW CHANNELS.
Abstract
Two-dimensional self-consistent numerical solutions to the Poisson and Schroedinger equations have been obtained for electron states in narrow gate-induced channels. The formulation of and numerical methods employed in this calculation are described. Electron states calculated for the metal-oxide-silicon grating-gate field-effect transistor are described and compared to electron energy level spacings inferred from the recent channel conductance data of Warren, et al. (1986)