Self-aligned In_0.53Ga_0.47As/InAs/InP vertical tunnel FETs

Abstract

A relatively simple and self-aligned vertical tunneling field-effect transistor (VTFET) process has been demonstrated using In0.53Ga 0.47As/InAs/InP heterojunctions. At 300 K, the VTFETs show an on-current of 3 - 4.8 μA/μm and a minimum subthreshold swing (SS) of 220 mV/dec using Al2O3 gate oxide. The corresponding tunneling diodes exhibit negative differential resistance under forward bias over a range of temperatures, which confirms that the conduction mechanism is indeed band-to-band tunneling. This new self-aligned process is attractive to quickly realize and test VTFET designs.