Publication
Applied Physics Letters
Paper

Self-aligned diffusion barrier by nitridation of TiSi2

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Abstract

Nitridation of TiSi2 has been shown to provide a self-aligned diffusion barrier layer on top of the silicide. A detailed analysis of the nitridation mechanism shows that the compound formed is TiN as commonly expected. The reaction TiSi2→TiN starts at the surface and progresses through the silicide film with a laterally uniform interface. The Si atoms that are dissociated from the TiSi2 grow epitaxially onto the Si substrate material. Implications for contact applications are mentioned.

Date

01 Jan 1988

Publication

Applied Physics Letters

Authors

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