About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Conduction mechanism in PtSi/Si Schottky diodes
Abstract
The conduction mechanism in PtSi/Si Schottky diodes has been studied in the temperature range of 80 to 300 K. Above 100 K the forward current-voltage (I-V) characteristic of the diodes is highly ideal and obeys the thermionic-emission theory including image-force lowering of the barrier. Certain diodes show a deviation from this behavior, which is due to carrier recombination in the depletion region. Factors that contribute to carrier recombination are a small area-to-periphery ratio and a thick silicide layer. Carrier recombination is also responsible for the soft behavior of the reverse I-V characteristic. The temperature dependence of the barrier height and the bias-independent position of the quasi-Fermi-level at the interface are shown to be associated with a high density of interface states. The activation energy found for the current transport at low temperatures suggests that these states are due to substitutional Pt atoms on the Si lattice. © 1991 The American Physical Society.