B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
A selective chemical vapor deposition process of a ruthenium (Ru) metal capping layer was investigated for Cu interconnects in ultralarge scale integrated circuits. X-ray fluorescence spectroscopy determined the Ru deposition selectivity as a function of the deposition temperature and substrate materials. The feasibility of the selective Ru metal capping layer in the Cu interconnects for nanoelectronic applications was checked via a comprehensive evaluation including both electrical and reliability. © 2010 The Electrochemical Society.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011