Scaling beyond conventional CMOS device

Abstract

Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We will discuss ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic. We also discuss various mobility enhancement techniques including strained silicon on insulator (SGOI), strained silicon directly on insulator (SSDOI), and hybrid orientation technology (HOT). © 2004 IEEE.