IEDM 1998
Conference paper

Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation


The scalability of SOI CMOS technology into the low voltage high performance regime and its comparison with bulk CMOS technology is presented. Based on ring oscillator performance, the 0.13 μm SOI CMOS technology can achieve more than 25% faster speed and/or 50% less active power compared to a similar bulk technology.