Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2

Abstract

The role of chemical potentials in surface reconstructions is examined and shown to be crucial for binary semiconductor srufaces such as GaAs(111)2×2. We predict that under As-rich conditions a new model, the As triangle, is the lowest-energy geometry, whereas the Ga-vacancy model is appropriate for Ga-rich conditions. A change in the relative chemical potential of Ga and As should produce a phase transition between the two structures. © 1986 The American Physical Society.