RF field dependence of memory echoes in LiNbO₃ and GaAs powder

Abstract

Measurements of the rf electric field dependence of the amplitude of the "memory" echo in LiNbO3 and GaAs powders are reported. Consistent with the torque-rotation model, the dependence on each of the three applied rf pulses is linear in the low power regime. At high power, more complex behavior is found including an irreversible decrease in the echo amplitude when the third applied pulse is larger than the preceeding two pulses. © 1978.