RF CMOS for microwave and MM-wave applications

Abstract

RFCMOS is gaining significant momentum as the technology of choice for implementing product designs in the 1-10GHz band. With scaling pushing f T and fMAx of FET's beyond 300GHz and integration of back-end-of-line (BEOL) conducive to low-loss passives, CMOS is poised to address application needs in the X, K and V bands. © 2006 IEEE.