Ruqiang Bao, Richard G. Southwick, et al.
VLSI Technology 2018
The temperature dependence of ring-oscillator delay of high-k/metal- gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature. © 2009 IEEE.
Ruqiang Bao, Richard G. Southwick, et al.
VLSI Technology 2018
Yu-Ming Lin, Christos Dimitrakopoulos, et al.
Applied Physics Letters
G. Tsutsui, C. Durfee, et al.
VLSI Technology 2018
Shu-Jen Han, Alberto Valdes-Garcia, et al.
IEDM 2011