S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
We have calculated, within the effective-mass approximation, the current-voltage characteristics for resonant tunneling through a Ga1-xAlxAs-GaAs-Ga1-xAlxAs heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 Aiš40 Aiš100 Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena. © 1988 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Ronald Troutman
Synthetic Metals
T.N. Morgan
Semiconductor Science and Technology