T.G. Finstad, D.D. Anfiteatro, et al.
Thin Solid Films
Strained layers generally relax by dislocation glide. Here, using UHV-TEM, we study growth of Ge islands on Si(001) at ≲350°C. We find that, although conventional relaxation (i.e., via glide of 60°dislocations) is suppressed, the islands grow relaxed from the outset, by direct incorporation of sessile 90°dislocations into the edge of the growing island. Paradoxically, the low-temperature islands are more fully relaxed than those grown at higher temperature.© 1995 American Institute of Physics.
T.G. Finstad, D.D. Anfiteatro, et al.
Thin Solid Films
J. Tersoff
Applied Physics Letters
F.-J. Meyer Zu Heringdorf, M.C. Reuter, et al.
Applied Physics A: Materials Science and Processing
F.K. LeGoues, J. Tersoff, et al.
Physical Review Letters