Conference paper
Reliability challenges with ultra-low k interlevel dielectrics
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
Paper
Relationship between interfacial adhesion and electromigration in Cu metallization
Abstract
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
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Theory for electromigration failure in Cu conductors
J.R. Lloyd, C.E. Murray, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2005