Reflection-absorption infrared investigation of hydrogenated silicon oxide generated by the thermal decomposition of H ₈Si ₈O ₁₂ clusters

Abstract

Reflection-absorption infrared spectroscopy has been employed to observe Si-H bonds within a model, ultrathin silicon oxide. Upon heating a monolayer of H 8Si 8O 12/Si(100-2×1 to 700°C, Si-H bonds as a part of HSiO 3 entities are still detected within the oxide layer after cooling. These fragments appear to be stable to temperatures of at least 850°C. Reversible hydrogen/deuterium exchange for these entities is also directly observed. © 2002 American Institute of Physics.