The role of second-neighbor effects in photoemission: Are silicon surfaces and interfaces special?

Abstract

A widely used assignment scheme for Si 2p core-level photoemission studies of silicon oxidation relies solely on the formal oxidation state of the silicon. The tacit assumption of this assignment methodology is that second-neighbor effects have no measurable effect on observed Si 2p binding energies. In this letter, new experiments are combined with literature precedents to make the case that the second-neighbor effects play an important role in determining binding energy shifts. © 1998 American Institute of Physics.