R.V. Joshi, S.P. Kowalczyk, et al.
VLSI Circuits 2000
Chemical vapor deposition of high purity gold is demonstrated using ethyl(trimethylphosphine)gold(I) at temperatures as low as room temperature. Total selectivity for growth on atomically clean metallic surfaces in the presence of insulating surfaces is found over a ∼200°C temperature range and confirmed with scanning electron microscopy and x-ray photoelectron spectroscopy. A key processing parameter is shown to be ultrahigh vacuum, particularly for growth on reactive metals such as chromium. These results suggest low-temperature selectivity can be extended to other known precursors.
R.V. Joshi, S.P. Kowalczyk, et al.
VLSI Circuits 2000
K.-W. Lee, S.P. Kowalczyk, et al.
ACS National Meeting 1989
K.-W. Lee, S.P. Kowalczyk, et al.
ANTEC Annual Technical Conference 1991
T.S. Oh, S.P. Kowalczyk, et al.
Journal of Adhesion Science and Technology